| 1. | Electrons from the metal will have to surmount the potential barrier to enter the semiconductor .
金属中的电子必须克服这个势垒层才能进入半导体。 |
| 2. | The potential barrier feature of quot; huangzhong tongyun quot
的潜在音系特征 |
| 3. | Effect of ionic vacancies on potential barrier at grain boundaries in batio
钛酸钡陶瓷离子缺位对晶界势垒的影响 |
| 4. | Study on fusion potential barrier in heavy ion reactions based on the dynamical model
重离子熔合势垒的动力学模型研究 |
| 5. | The calculation of maximum potential barrier height of donor - doped barium titanate ceramics
施主掺杂钛酸钡陶瓷最大势垒高度计算 |
| 6. | When the energy accumulation surpasses the potential barrier and reaches the expected difficulty , thus completing the process of thinking creativity
通过超过势垒能量的蓄积，达到预定成果的难度水平，即可以完成思维创新过程。 |
| 7. | Though they discuss the impurity in the qwws under the electric field in more ditail , they localized the square gaas / ga _ ( 0 . 63 ) al _ ( 0 . 37 ) as qwws with the infinite potential barrier case
前人虽然对外加电场下量子阱线中的杂质态做了较为详细的讨论，但是他们所选取的矩形量子阱线仅仅局限在无限深的情况。 |
| 8. | We process calculations as the following : we calculate the binding energies of excitons in a square quantum - well wire in presence of a magnetic field for finite and infinite potential barrier case respectively
A . balandin和s . bandyopadhyay也是利用变分法，采用二能带模型计算了在外加磁场时的量子线中激子的基态束缚能。 |
| 9. | Under a unified model of carrier transport over trap state established potential barrier at drain side , device degradation behavior such as asymmetric on - current recovery and threshold voltage degradation can be understood
我们通过载流子在漏极附加陷阱态势垒的输运模型,解释了器件在应力后出现的阈值电压的退化现象和非对称性开态电流恢复现象。 |
| 10. | Starting from the study of thinking creativity thermodynamics which is the controlling stage of thinking creativity process , this paper analyses systematically the obtaining of thinking creativity has to overcome certain potential barrier , during the thinking process
摘要从思维创新过程的控制阶段思维创新热力学研究入手，系统地分析了思考过程取得创新成果必须克服一定的势垒，才能完成创新思维成果。 |
